Takahiro Mori

Work

National Institute of Advanced Industrial Science and Technology (AIST)
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Researcher

Japan

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National Institute of Advanced Industrial Science and Technology
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Postdoctoral Researcher

Japan

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RIKEN
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Postdoctoral Researcher

Japan

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Education

Tohoku Univeristy
Japan

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Doctor

Tohoku Univerisity
Japan

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Master

Tohoku University
Japan

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Bachelor

Publications

Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current

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Japanese Journal of Applied Physics

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journal-article

Simulation study of short-channel effects of tunnel field-effect transistors

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Japanese Journal of Applied Physics

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Enhancement of capacitance benefit by drain offset structure in tunnel field-effect transistor circuit speed associated with tunneling probability increase

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Japanese Journal of Applied Physics

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Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation

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Solid-State Electronics

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journal-article

Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

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Mrs Communications

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On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors

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Japanese Journal of Applied Physics

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Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering

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Japanese Journal of Applied Physics

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Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

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Japanese Journal of Applied Physics

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Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability

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Japanese Journal of Applied Physics

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Bias temperature instability in tunnel field-effect transistors

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Japanese Journal of Applied Physics

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Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering

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Materials Science in Semiconductor Processing

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Impact of extension implantation conditions of fin field-effect transistors on gate-induced drain leakage

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Japanese Journal of Applied Physics

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Characterization of Effective Mobility and Its Degradation Mechanism in MoS2 MOSFETs

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Ieee Transactions on Nanotechnology

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Closed-form analytical model of static noise margin for ultra-low voltage eight-transistor tunnel FET static random access memory

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Japanese Journal of Applied Physics

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Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology

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2016 Ieee International Electron Devices Meeting (Iedm)

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book-chapter

Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

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Japanese Journal of Applied Physics

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journal-article

Study of gate leakage current paths in p-channel tunnel field-effect transistor by current separation measurement and device simulation

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Japanese Journal of Applied Physics

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Characterization of effective mobility by split C-V technique in MoS2 MOSFETs with high-k/metal gate

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2015 Ieee 15th International Conference on Nanotechnology (Ieee-Nano)

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Design guidelines to achieve minimum energy operation for ultra low voltage tunneling FET logic circuits

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Japanese Journal of Applied Physics

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Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors

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Applied Physics Express

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Evolution of Nanoscale Silicon CMOS Technology for Ultra Low Power Application

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2015 Ieee International Meeting For Future of Electron Devices, Kansai (Imfedk)

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Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching

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Japanese Journal of Applied Physics

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Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

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Solid-State Electronics

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Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

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Solid-State Electronics

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Modeling of Parallel Electric Field Tunnel FETs

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18th International Workshop on Computational Electronics (Iwce 2015)

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PBTI for N-type Tunnel FinFETs

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2015 International Conference on IC Design & Technology (ICICDT)

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Understanding of BTI for Tunnel FETs

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2015 Ieee International Electron Devices Meeting (Iedm)

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Robust and Compact Key Generator Using Physically Unclonable Function Based on Logic-Transistor-Compatible Poly-Crystalline-Si Channel FinFET Technology

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2015 Ieee International Electron Devices Meeting (Iedm)

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Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

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Applied Physics Letters

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Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors

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Applied Physics Letters

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Accurate Prediction of PBTI Lifetime for N-type Fin-Channel Tunnel FETs

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2014 Ieee International Electron Devices Meeting (Iedm)

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book-chapter

Band-to-Band Tunneling Current Enhancement Utilizing Isoelectronic Trap and its Application to TFETs

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2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

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book-chapter

Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

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Applied Physics Letters

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journal-article

Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of less than 60 mV/decade and Very Low (pA/mu m) Off-Current on a Si CMOS Platform

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2014 Ieee International Electron Devices Meeting (Iedm)

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book-chapter

High-Performance Tri-Gate Poly-Ge Junction-Less P- and N-MOSFETs Fabricated by Flash Lamp Annealing Process

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2014 Ieee International Electron Devices Meeting (Iedm)

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book-chapter

High-performance poly-Ge short-channel metal-oxide-semiconductor field-effect transistors formed on SiO2 layer by flash lamp annealing

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Applied Physics Express

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journal-article

Improvement of Epitaxial Channel Quality on Heavily Arsenic-and Boron-doped Si surfaces and Impact on Tunnel FET Performance

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Proceedings of the 2014 44th European Solid-State Device Research Conference (Essderc 2014)

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book-chapter

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

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Ieee Electron Device Letters

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Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

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Solid-State Electronics

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Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors

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Applied Physics Express

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Variation Behavior of Tunnel-FETs Originated from Dopant Concentration at Source Region and Channel Edge Configuration

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Proceedings of the 2014 44th European Solid-State Device Research Conference (Essderc 2014)

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book-chapter

Tunnel Field-Effect Transistor with Epitaxially Grown Tunnel Junction Fabricated by Source/Drain-First and Tunnel-Junction-Last Processes

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Japanese Journal of Applied Physics

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A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling

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Journal of Applied Physics

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Analysis of Threshold Voltage Shifts in Double Gate Tunnel FinFETs: Effects of Improved Electrostatics by Gate Dielectrics and Back Gate Effects

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2013 International Symposium on Vlsi Technology, Systems, and Applications

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book-chapter

Guidelines for Symmetric Threshold Voltage in Tunnel FinFETs with Single and Dual Metal Gate Electrodes

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2013 Proceedings of the European Solid-State Device Research Conference (Essderc)

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book-chapter

Performance Limit of Parallel Electric Field Tunnel FET and Improvement by Modified Gate and Channel Configurations

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2013 Proceedings of the European Solid-State Device Research Conference (Essderc)

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journal-article

First Demonstration of Drain Current Enhancement in SOI Tunnel FET with Vertical-Tunnel-Multiplication

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Ieee International Soi Conference

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book-chapter

SiO2/Si interfaces on high-index surfaces: Re-evaluation of trap densities and characterization of bonding structures

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Applied Physics Letters

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Vacuum-ultraviolet reflectance difference spectroscopy for characterizing dielectrics-semiconductor interfaces

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Thin Solid Films

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Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation

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Japanese Journal of Applied Physics

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Raman, nuclear magnetic resonance, and transport characteristics of C-13 enriched single-walled carbon nanotubes

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Journal of Nanophotonics

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Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique

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Journal of Vacuum Science & Technology B

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High-Temperature Operation of Single-Electron Transistors Based on Single-Walled Carbon Nanotubes

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Sensors and Materials

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Barrier formation technique using low energy Ar ion irradiation to form wide temperature range operable SWCNT-SET

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2009 9th Ieee Conference on Nanotechnology

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book

Coupled Quantum Dots in a Graphene-Based Two-Dimensional Semimetal

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Nano Letters

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Study of local segregation in GaInNAs using EXAFS measurements

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Journal of Physics and Chemistry of Solids

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Charge trapping effects in photovoltage measurements of (Ga,Mn)As

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Physica B-Condensed Matter

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Improved temperature characteristics of single-wall carbon nanotube single electron transistors using carboxymethylcellulose dispersant

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Applied Physics Letters

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Optical properties and thermal stability of GaAsN alloy films

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Journal of Luminescence

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Molecular beam epitaxy and magnetic properties of GaMnNAs

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Journal of Crystal Growth

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Magnetic and crystalline properties of GaMnNAs and low-temperature annealing effect

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2006 Conference on Optoelectronic and Microelectronic Materials & Devices

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book

Ordering of In and Ga in epitaxially grown In0.53Ga0.47As films on (001)InP substrates

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Materials Transactions

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journal-article

Experimental demonstration of Fano-type resonance in photoluminescence of ZnS : Mn/SiO2 one-dimensional photonic crystals

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Applied Physics Letters

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GaNAs(001) surface phases under growing condition

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Journal of Vacuum Science & Technology B

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Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAS(001)

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Current Applied Physics

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Surface structure of InGaAs/InP(001) ordered alloy during and after growth

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Applied Surface Science

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Comparison of the capabilities of rotating-analyzer and rotating-compensator ellipsometers by measurements on a single system

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Thin Solid Films

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Optical anisotropy of GaNAs grown on GaAS(001) substrate

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Current Applied Physics

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Dielectric functions of InxGa1-xAs alloys

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Physical Review B

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Measurements of a component of the piezo-optic tensor of Si by reflectance difference spectroscopy

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Journal of Applied Physics

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Measurements of the linear electro-optic coefficients of ZnTe by RDS

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Physica Status Solidi B-Basic Research

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