Misagh Ghezellou

Work

Linköpings universitet
|

PhD Student

Sweden

Linköpings universitet
|

Visiting Researcher

Sweden

Education

Shahrood University of Technology
Iran (Islamic Republic of)

M.Sc in Nano science and technology (Nano physics)

Shahrood University of Technology
Iran (Islamic Republic of)

B.Sc in Physics

Publications

The critical role of hydrocarbon source and growth optimization for high-quality thick 4H-SiC epitaxial layers

Published by

Journal of Crystal Growth

Summary

journal-article

Single V2 defect in 4H silicon carbide Schottky diode at low temperature

Published by

Nature Communications

Summary

journal-article

Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers

Published by

Journal of Physics: Materials

Summary

journal-article

Epitaxial Growth of SiC via CVD for Power Electronics and Quantum Applications

Summary

book

Effective uniaxial dielectric function tensor and optical phonons in ( 2¯01 )-oriented β - Ga2O3 films with equally distributed sixfold-rotation domains

Published by

Physical Review Applied

Summary

journal-article

High-Fidelity Optical Readout of a Nuclear-Spin Qubit in Silicon Carbide

Published by

Physical Review Letters

Summary

journal-article

Author Correction: Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Published by

npj Quantum Materials

Summary

journal-article

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Published by

npj Quantum Materials

Summary

journal-article

Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers

Published by

physica status solidi (b)

Summary

journal-article

Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H-SiC Epitaxial Layers

Published by

Physica Status Solidi (B) Basic Research

Summary

journal-article

Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide

Published by

Physical Review Letters

Summary

journal-article

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Published by

Nature Communications

Summary

journal-article

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Published by

Nature Communications

Summary

journal-article

Spectral stability of V2-centres in sub-micron 4H-SiC membranes

Summary

preprint

Characterization of single shallow silicon-vacancy centers in 4H−SiC

Published by

Physical Review B

Summary

journal-article

Characterization of single shallow silicon-vacancy centers in 4H-SiC

Published by

Physical Review B

Summary

journal-article

The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers

Published by

APL Materials

Summary

journal-article

The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers

Published by

APL Materials

Summary

journal-article

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Published by

Physical Review X

Summary

journal-article

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Published by

Physical Review X

Summary

journal-article

Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide

Published by

arXiv

Summary

other

Multiemitter cavity quantum electrodynamics in 4H-silicon carbide-on-insulator photonics

Published by

2023 Conference on Lasers and Electro-Optics, CLEO 2023

Summary

conference-paper

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Published by

AIP Advances

Summary

journal-article

Epitaxial growth of β -Ga<sub>2</sub>O<sub>3</sub>by hot-wall MOCVD

Published by

AIP Advances

Summary

journal-article

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

Published by

physica status solidi (b)

Summary

journal-article

The Origin and Formation Mechanism of an Inclined Line-like Defect in 4H-SiC Epilayers

Published by

Physica Status Solidi (B) Basic Research

Summary

journal-article

Broadband single-mode planar waveguides in monolithic 4H-SiC

Published by

Journal of Applied Physics

Summary

journal-article

Broadband single-mode planar waveguides in monolithic 4H-SiC

Published by

Journal of Applied Physics

Summary

journal-article

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Published by

Applied Physics Letters

Summary

journal-article

Influence of Carbon Cap on Self-Diffusion in Silicon Carbide

Published by

Crystals

Summary

journal-article

Influence of Carbon Cap on Self-Diffusion in Silicon Carbide

Published by

Crystals

Summary

journal-article

Influence of Carbon Cap on Self-Diffusion in Silicon Carbide

Published by

Crystals

Summary

journal-article

Influence of carbon cap on self-diffusion in silicon carbide

Published by

Crystals

Summary

journal-article

Novel nanostructures of bromoaluminum phthalocyanine grown by physical vapor phase transport

Published by

Journal of Materials Science: Materials in Electronics

Summary

journal-article

Novel nanostructures of bromoaluminum phthalocyanine grown by physical vapor phase transport

Published by

Journal of Materials Science: Materials in Electronics

Summary

journal-article