Semiconductors, quantum wells, quantum wires, quantum dots, 2D-material, stheoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
Tunisia
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Education
University of el manar
Tunisia
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proff
Ecole Normale Superieure Département de Physique
Tunisia
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Publications
InAsN/GaSb/InAsN ‘W’quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations
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journal-article
Electrocinétique:Eléments de cours et exercices corrigés
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book
Du puits quantique à la diode laser : Aspects théoriques et modélisation
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book
Dilute-Nitride" W" and" M" InAsN/GaSb laser diodes for gaz analysis in the mid-infrared domain
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conference-paper
Calculations of hole subbands and oscillator strengths in strained Si/Si_1-xGe_x/Si quantum wells
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conference-abstract
A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
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journal-article
A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
Mécanique : Tome II Exercices et problèmes corrigés
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book
MECANIQUE I
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book
Study of the structural and electronic properties of Zn1−x−yMgxTiyO structures
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Journal of Vacuum Science & Technology B
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journal-article
Optical Transmission Enhancement of MoS<sub>2</sub> Nanosheets Doped with Magnetic Materials Ni, Mn, and Cr
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Journal of Optics and Photonics Research
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journal-article
Optical Transmission Enhancement of MoS2 Nanosheets Doped with Magnetic Materials Ni, Mn, and Cr
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Journal of Optics and Photonics Research
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journal-article
Linear and nonlinear electric and magneto-optical absorption coefficients and relative refractive index changes in WxMo1−xS2 monolayer: Role of tungsten contents
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Journal of Nonlinear Optical Physics & Materials
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journal-article
Mid-Infrared Emission in Ge/Ge1-xSnx/Ge Quantum Well Modeled Within 14-Band k.p Model
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Electronics
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journal-article
Mid-Infrared Emission in Ge/Ge<sub>1-x</sub>Sn<sub>x</sub>/Ge Quantum Well Modeled Within 14-Band <i>k.p</i> Model
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Electronics
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journal-article
Effect of Ni-concentration on the linear and nonlinear optical properties of MoS2 nanostructures
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International Journal of Modern Physics B
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journal-article
Surface Tailoring of MoS2 Nanosheets with Substituted Aromatic Diazonium Salts for Gas Sensing: A DFT Study
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ACS Omega
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journal-article
Linear and nonlinear exciton polariton dispersion in MoS2 nanosheets and its nickel doping dependence
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Physica Scripta
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journal-article
Investigation of α-Sn Dependence of Band Structure and Optical Emission in Si/SiyGe1-x-ySnx/Si Quantum Well Laser
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Silicon
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journal-article
Effect of defects and doping on the transmission spectrum enhancement of photonic crystal based on 2D-MoS2
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Journal of Nonlinear Optical Physics & Materials
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journal-article
Effect of Ni-concentration on the linear and nonlinear optical properties of MoS<sub>2</sub>nanostructures
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International Journal of Modern Physics B
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journal-article
Linear and nonlinear electric and magneto-optical absorption coefficients and relative refractive index changes in W<sub>x</sub>Mo<sub>1 - x</sub>S<sub>2</sub> monolayer: Role of tungsten contents
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Journal of Nonlinear Optical Physics and Materials
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journal-article
Calculation of Ground State and Hartree Energies of Mos2/Wse2 Assembled Type Ii Quantum Well
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SSRN
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other
Tailoring the optical band gap of In–Sn–Zn–O (ITZO) nanostructures with co-doping process on ZnO crystal system: an experimental and theoretical validation
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European Physical Journal Plus
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journal-article
Tailoring the optical band gap of In–Sn–Zn–O (ITZO) nanostructures with co-doping process on ZnO crystal system: an experimental and theoretical validation
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The European Physical Journal Plus
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journal-article
Calculation of ground state and Hartree energies of MoS<sub>2</sub>/WSe<sub>2</sub> assembled type II quantum well
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Micro and Nanostructures
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journal-article
Calculation of ground state and Hartree energies of MoS2/WSe2 assembled type II quantum well
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Micro and Nanostructures
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journal-article
Investigation of orientation dependence of piezoelectric effects in strained GaAs/InGaAs quantum well laser
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Materials Science and Engineering: B
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journal-article
Temperature effect on structural, morphological and optical properties of 2D-MoS2 layers: An experimental and theoretical study
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Optik
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journal-article
Temperature effect on structural, morphological and optical properties of 2D-MoS<sub>2</sub> layers: An experimental and theoretical study
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Optik
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journal-article
Investigation of orientation dependence of piezoelectric effects in strained GaAs/InGaAs quantum well laser
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Materials Science and Engineering: B
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journal-article
Design considerations of AlGaInAs quaternary nanowires for mid-infrared applications
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Chemical Physics Letters
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journal-article
Design considerations of AlGaInAs quaternary nanowires for mid-infrared applications
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Chemical Physics Letters
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journal-article
Large optical gain from the 2D-transition metal dichalcogenides of MoS2/WSe2 quantum wells
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Superlattices and Microstructures
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journal-article
Mid-infrared emission in InxGa1−xAs/GaAs T-shaped quantum wire lasers and its indium composition dependence
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Infrared Physics & Technology
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journal-article
Proposal of InP/AlInGaAs single delta quantum well for fiber-optic communications
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Optik
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journal-article
Proposal of InP/AlInGaAs single delta quantum well for fiber-optic communications
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Optik
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journal-article
GaSbBi/GaSb quantum-well and wire laser diodes
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Chemical Physics Letters
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journal-article
GaSbBi/GaSb quantum-well and wire laser diodes
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Chemical Physics Letters
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journal-article
Mid-infrared emission in In<sub>x</sub>Ga<sub>1−x</sub>As/GaAs T-shaped quantum wire lasers and its indium composition dependence
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Infrared Physics and Technology
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journal-article
Large optical gain from the 2D-transition metal dichalcogenides of MoS2/WSe2 quantum wells
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Superlattices and Microstructures
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journal-article
Novel T-shaped GaSb/InAsN quantum wire for mid-infrared laser applications
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Physics Letters, Section A: General, Atomic and Solid State Physics
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journal-article
Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm
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Superlattices and Microstructures
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journal-article
Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm
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Superlattices and Microstructures
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journal-article
Novel T-shaped GaSb/InAsN quantum wire for mid-infrared laser applications
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Physics Letters A
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journal-article
Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence
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IEEE Journal of Quantum Electronics
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journal-article
Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence
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IEEE Journal of Quantum Electronics
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journal-article
Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence
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IEEE Journal of Quantum Electronics
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journal-article
High-efficiency of AlInGaN/Al(In)GaN-delta AlGaN quantum wells for deep-ultraviolet emission
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Superlattices and Microstructures
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journal-article
Oscillator strengths for the intersubband transitions in GaAs/InGa<sub>1-x</sub>As quantum wells and its strain dependence
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Optik
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journal-article
Theoretical investigations of the performance of the active laser region by the calculation of the optical gain
Published by
Optik
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journal-article
Theoretical investigations of the performance of the active laser region by the calculation of the optical gain
Published by
Optik
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journal-article
High-efficiency of AlInGaN/Al(In)GaN-delta AlGaN quantum wells for deep-ultraviolet emission
Published by
Superlattices and Microstructures
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journal-article
Oscillator strengths for the intersubband transitions in GaAs/InGa1–As quantum wells and its strain dependence
Published by
Optik
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journal-article
Band structure, optical transition, and optical gain of type-ii inas(n)/gasb quantum wells laser diodes modeled within 16-band and 14-band kp model
Published by
IEEE Journal of Quantum Electronics
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journal-article
Band Structure, Optical Transition, and Optical Gain of Type-II InAs(N)/GaSb Quantum Wells Laser Diodes Modeled Within 16-Band and 14-Band kp Model
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IEEE Journal of Quantum Electronics
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journal-article
Hole intersubband transitions in wurtzite and zinc-blende strained AlGaN/GaN quantum wells and its interband interaction dependence
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International Journal of Modern Physics B
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journal-article
Hole intersubband transitions in wurtzite and zinc-blende strained AlGaN/GaN quantum wells and its interband interaction dependence
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International Journal of Modern Physics B
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journal-article
Effect of hydrostatic pressure on the hole effective mass in a strained InGaAs/GaAs quantum well
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Journal of Physics and Chemistry of Solids
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journal-article
Effect of hydrostatic pressure on the hole effective mass in a strained InGaAs/GaAs quantum well
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Journal of Physics and Chemistry of Solids
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journal-article
Orientation dependence of optoelectronic properties in InAsN/GaSb quantum well laser diodes with W and M design
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Semiconductor Science and Technology
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journal-article
Dependence of hole effective mass on nitrogen concentration in W-type strained InAs(N)/GaSb/InAs(N) quantum well lasers
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The European Physical Journal B
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journal-article
Dependence of hole effective mass on nitrogen concentration in W-type strained InAs(N)/GaSb/InAs(N) quantum well lasers
Published by
The European Physical Journal B
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journal-article
Dependence of hole effective mass on nitrogen concentration in W-type strained InAs(N)/GaSb/InAs(N) quantum well lasers
Published by
European Physical Journal B
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journal-article
A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
Published by
Semiconductor Science and Technology
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journal-article
Theoretical comparison of dilute-nitride W and M InAsN/GaSb mid-infrared laser diodes
Published by
Physics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009
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conference-paper
Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers.
Published by
Journal of Applied Physics
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journal-article
Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers.
Published by
Journal of Applied Physics
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journal-article
InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations
Published by
Journal of Physics D: Applied Physics
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journal-article
Symmetrized Hamiltonian versus 'Foreman' Hamiltonian for semiconductor valence band: An insight
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Solid State Communications
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journal-article
Symmetrized Hamiltonian versus ‘Foreman’ Hamiltonian for semiconductor valence band: an insight
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Solid State Communications
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journal-article
Band structures of GaAs, InAs, and Ge: A 24-k.p model
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Journal of Applied Physics
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journal-article
Band structures of GaAs, InAs, and Ge: A 24-k.p model
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Journal of Applied Physics
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journal-article
Band structures of Ge and InAs: A 20 k.p model
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Journal of Applied Physics
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journal-article
Theoretical investigation of intersubband hole transitions in Si/SiGe/Si quantum wells
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Journal of Applied Physics
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journal-article
Theoretical investigation of intersubband hole transitions in Si/SiGe/Si quantum wells
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Journal of Applied Physics
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journal-article
Band structures of Ge and InAs: A 20 k.p model
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Journal of Applied Physics
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journal-article
Luttinger-like parameter calculations
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Physical Review B - Condensed Matter and Materials Physics
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journal-article
Luttinger-like parameter calculations
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Physical Review B - Condensed Matter and Materials Physics
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journal-article
Luttinger-like parameter calculations
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Physical Review B
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journal-article
Infrared absorption in Si/Si<sub>1-x</sub>Ge<sub>x</sub>/Si quantum wells
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Physical Review B - Condensed Matter and Materials Physics
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journal-article
Infrared absorption in Si/Si1−xGex/Si quantum wells